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GaAs infrared material
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GaAs Infrared material
GaAs infrared material has good chemistry stability, high hardness and has strong resistance to bad environment. It has good transmission in the range of 2µm-14µm wavelength. It could be widely used in the fields of thermal infrared imaging system, high power CO2 laser optical system and FLIR systems. GaAs provides an alternative to ZnSe in medium and high-power CW CO2 laser systems for lenses and rear mirrors. GaAs is particularly useful in applications where toughness and durability are important.Parameters of GaAs infrared material
Growth methodHB or VGFPurity≧6NDensity5.37 g/cm3DopantCrTypePResistivity (Ω·cm)> 10 E7Transmission~55% (1.5- 14 um wavelength)Volume absorption coefficient@ 10.6µm≦ 0.01 /cmRefractive index temperature coefficient @ 10.6µm149 × 10-6/°CThermal conductivity @ 20° C0.48 W/cm/°CSpecific heat0.325 J/g/°Clinear expansion coefficient @ 20° C5.7 × 10-6 /°CYoung's modulus83 GPa (12.04 × 106 psi)Fracture toughness138 MPa (20,000 psi)Knoop hardness750 kg/mm2Poisson ratio0.31Dependence of refractive index to wavelength (20℃)Wavelength (nm)Refractive index (n)Wavelength (nm)Refractive index (n)40003.31145002.8280003.34150002.73100003.13170002.59110003.04190002.41130002.97219002.12137002.89Special order is workable! Plz mail to [email protected] for details!Contact:Jason Wang Mobile:+86-18039202132
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